graph LR
subgraph "全桥逆变功率级"
A["20VDC输入"] --> B["输入滤波电容"]
B --> C["正极总线"]
B --> D["地总线"]
subgraph "H桥功率开关"
Q_H1["VBM1805 \n S1"]
Q_H2["VBM1805 \n S2"]
Q_H3["VBM1805 \n S3"]
Q_H4["VBM1805 \n S4"]
end
C --> Q_H1
C --> Q_H3
Q_H1 --> E["桥臂中点A"]
Q_H2 --> F["桥臂中点B"]
Q_H3 --> F
Q_H4 --> E
Q_H2 --> D
Q_H4 --> D
end
subgraph "谐振网络与发射线圈"
E --> G["串联谐振电容"]
F --> G
G --> H["发射线圈Lp"]
H --> I["补偿网络"]
I --> J["屏蔽磁环"]
J -.-> K["无线磁场耦合"]
end
subgraph "栅极驱动与保护"
L["PWM控制器"] --> M["全桥驱动器"]
M --> N["S1栅极"]
M --> O["S2栅极"]
M --> P["S3栅极"]
M --> Q["S4栅极"]
N --> Q_H1
O --> Q_H2
P --> Q_H3
Q --> Q_H4
R["RC缓冲网络"] --> E
R --> F
S["电流互感器"] --> T["电流反馈"]
T --> L
end
style Q_H1 fill:#e8f5e8,stroke:#4caf50,stroke-width:2px
style Q_H2 fill:#e8f5e8,stroke:#4caf50,stroke-width:2px
DC-DC降压与智能供电拓扑详图
graph LR
subgraph "同步降压转换器"
A["20V输入"] --> B["输入电容"]
B --> C["开关节点"]
subgraph "功率开关管"
Q_HI["VBE1104N \n 高侧开关"]
Q_LO["VBE1104N \n 低侧开关"]
end
A --> Q_HI
Q_HI --> C
C --> D["功率电感"]
D --> E["输出电容"]
E --> F["5V输出"]
Q_LO --> G["地"]
C --> Q_LO
end
subgraph "控制与反馈"
H["降压控制器"] --> I["栅极驱动器"]
I --> J["高侧驱动"]
I --> K["低侧驱动"]
J --> Q_HI
K --> Q_LO
F --> L["电压分压反馈"]
L --> H
M["电流检测放大器"] --> N["电感电流检测"]
N --> H
end
subgraph "多路LDO稳压"
F --> O["5V主电源轨"]
O --> P["LDO 3.3V"]
O --> Q["LDO 1.8V"]
O --> R["LDO 1.2V"]
P --> S["MCU核心供电"]
Q --> T["AI模块IO"]
R --> U["AI模块核心"]
end
subgraph "智能负载管理"
S --> V["GPIO控制线"]
V --> W["电平转换器"]
W --> X["VBA2307B栅极"]
subgraph X ["VBA2307B双路开关"]
direction LR
GATE_IN1[IN1]
GATE_IN2[IN2]
SRC1[源极1]
SRC2[源极2]
DRN1[漏极1]
DRN2[漏极2]
end
O --> DRN1
O --> DRN2
SRC1 --> Y["AI模块电源"]
SRC2 --> Z["通信模块电源"]
end
style Q_HI fill:#e3f2fd,stroke:#2196f3,stroke-width:2px
style X fill:#fff3e0,stroke:#ff9800,stroke-width:2px
热管理与EMC设计拓扑详图
graph LR
subgraph "三级热管理系统"
subgraph "一级散热: 主功率MOSFET"
A["铝散热片"] --> B["导热硅脂层"]
B --> C["VBM1805 MOSFET阵列"]
D["微弱气流 \n (自然对流/微风)"] --> A
end
subgraph "二级散热: DC-DC功率器件"
E["2oz加厚铜箔"] --> F["散热过孔阵列"]
F --> G["背面铜层"]
G --> H["金属支架/外壳"]
I["VBE1104N MOSFET"] --> E
end
subgraph "三级散热: 控制芯片"
J["PCB敷铜平面"] --> K["热焊盘"]
K --> L["VBA2307B负载开关"]
K --> M["MCU芯片"]
K --> N["驱动IC"]
end
end
subgraph "EMC设计与布局优化"
subgraph "传导EMI抑制"
O["输入π型滤波器"] --> P["共模电感"]
P --> Q["X/Y电容阵列"]
end
subgraph "辐射EMI控制"
R["紧凑功率环路 \n (面积<1cm²)"] --> S["Kelvin驱动连接"]
T["开关频率抖频 \n ±5%调制"] --> U["频谱能量分散"]
V["导电涂层外壳"] --> W["多点接地"]
end
subgraph "PCB布局优化"
X["功率层-地层 \n 紧密耦合"] --> Y["分割地平面"]
Z["敏感信号屏蔽"] --> AA["时钟线包地"]
AB["电源去耦电容"] --> AC["靠近芯片放置"]
end
end
subgraph "可靠性保护网络"
subgraph "电气应力保护"
AD["TVS二极管"] --> AE["输入端口"]
AF["肖特基二极管"] --> AG["感性负载续流"]
AH["RC缓冲电路"] --> AI["开关节点"]
end
subgraph "故障保护机制"
AJ["过流保护"] --> AK["硬件比较器"]
AL["过温保护"] --> AM["NTC温度监测"]
AN["异物检测"] --> AO["AI视觉算法"]
AK --> AP["快速关断信号"]
AM --> AP
AO --> AP
AP --> AQ["门极驱动禁用"]
AP --> AR["负载开关关断"]
end
end
style C fill:#e8f5e8,stroke:#4caf50,stroke-width:2px
style I fill:#e3f2fd,stroke:#2196f3,stroke-width:2px
style L fill:#fff3e0,stroke:#ff9800,stroke-width:2px
点击下载：VBE1104N规格书
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